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semiconductor group 1 1998-10-01 256 mbit synchronous dram preliminary information the hyb 39s256400/800/160t are four bank synchronous drams organized as 4 banks 16 mbit 4, 4 banks 8 mbit 8 and 4 banks 4 mbit 16 respectively. these syn- chronous devices achieve high speed data transfer rates for cas latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. the chip is fabricated with siemens advanced 256 mbit dram process technology. the device is designed to comply with all jedec standards set for synchronous dram products, both electrically and mechanically. all of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock. operating the four memory banks in an interleave fashion allows random access operation to occur at higher rate than is possible with standard drams. a sequential and gapless data rate of is possible depending on burst length, cas latency and speed grade of the device. auto refresh (cbr) and self refresh operation are supported. these devices operates with a single 3.3 v 0.3 v power supply and are available in tsopii packages. ? high performance: ? fully synchronous to positive clock edge ? 0 to 70 c operating temperature ? four banks controlled by ba0 & ba1 ? programmable cas latency: 2, 3, 4 ? programmable wrap sequence: sequential or interleave ? programmable burst length: 1, 2, 4, 8 -8 -8b -10 units f ck 125 100 100 mhz t ck3 81010ns t ac3 667ns t ck2 10 12 15 ns t ac2 678ns ? multiple burst read with single write operation ? automatic and controlled precharge command ? data mask for read/write control ( 4, 8) ? data mask for byte control ( 16) ? auto refresh (cbr) and self refresh ? suspend mode and power down mode ? 8192 refresh cycles/64 ms 7,8 m ? random column address every clk (1-n rule) ? single 3.3 v 0.3 v power supply ? lvttl interface versions ? plastic packages: p-tsopii-54 400mil width ( 4, 8, 16) ? -8 part for pc100 2-2-2 operation -8b part for pc100 3-2-3 operation -10 part for pc66 2-2-2 operation hyb 39s256400/800/160t
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 2 1998-10-01 ordering information type ordering code package description lvttl-version hyb 39s256400t-8 on request p-tsop-54-2 400 mil 125 mhz 4b 16 m 4 sdram pc100-222-620 hyb 39s256400t-8b on request p-tsop-54-2 400 mil 100 mhz 4b 16 m 4 sdram pc100-323-620 hyb 39s256400t-10 on request p-tsop-54-2 400 mil 66 mhz 4b 16 m 4 sdram pc66-222-820 hyb 39s256800t-8 on request p-tsop-54-2 400 mil 125 mhz 4b 8 m 8 sdram pc100-222-620 hyb 39s256800t-8b on request p-tsop-54-2 400 mil 100 mhz 4b 8 m 8 sdram pc100-323-620 hyb 39s256800t-10 on request p-tsop-54-2 400 mil 66 mhz 4b 8 m 8 sdram pc66-222-820 hyb 39s256800t-8 on request p-tsop-54-2 400 mil 125 mhz 4b 4 m 16 sdram pc100-222-620 hyb 39s256800t-8b on request p-tsop-54-2 400 mil 100 mhz 4b 4 m 16 sdram pc100-323-620 hyb 39s256800t-10 on request p-tsop-54-2 400 mil 66 mhz 4b 4 m 16 sdram pc66-222-820 pin description and pinouts clk clock input dq data input/output cke clock enable dqm, ldqm, udqm data mask cs chip select v dd power (+ 3.3 v) ras row address strobe v ss ground cas column address strobe v ddq power for dqs (+ 3.3 v) we write enable v ssq ground for dqs a0 - a12 address inputs nc not connected ba0, ba1 bank select
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 3 1998-10-01 pin configuration for 4, 8 & 16 organized 256 m-drams tsopii-54 (10.16 mm 22.22 mm, 0.8 mm pitch) gpx09039 22.22 0.13 1) 127 54 28 0.35 +0.1 -0.05 0.1 1 0.1 10.16 0.13 0.2 11.76 0.1 0.5 does not include plastic or metal protrusion of 0.15 max per side 1) 54x 0.05 0.05 0.15 -0.03 +0.06 15? 5? 15? 5? 6 max 2.5 max 2) 3) does not include plastic protrusion of 0.25 max per side 2) does not include dambar protrusion of 0.13 max per side 3) index marking 0.8 20.8 26x 0.8 = 0.2 m 54x
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 4 1998-10-01 block diagram for 64 m 4 sdram (13/11/2 addressing) a0 - a9, a11, ap ba0, ba1 column addresses address buffer column address counter column a0 - a12, ba0, ba1 row addresses row address buffer counter refresh column decoder sense amplifier & i(o) bus 8196 x bank 3 decoder array memory row sense amplifier & i(o) bus column decoder bank 2 8196 x row decoder array memory column decoder sense amplifier & i(o) bus sense amplifier & i(o) bus column decoder 2048 x 4 bit 8196 x bank 0 bank 1 8196 x row memory array decoder row decoder array memory input buffer output buffer dq0 - dq3 control logic & timing generator clk cke cs ras cas we dqm v ref *) *) on sstl versions only spb03781 2048 x 4 bit 2048 x 4 bit 2048 x 4 bit
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 5 1998-10-01 block diagram for 32 m 8 sdram (13/10/2 addressing) a0 - a9, ap, ba0, ba1 column addresses address buffer column address counter column a0 - a12, ba0, ba1 row addresses row address buffer counter refresh column decoder sense amplifier & i(o) bus 1024 x 8192 x bank 3 decoder array memory row 8 bit sense amplifier & i(o) bus column decoder 1024 x 8 bit bank 2 8192 x row decoder array memory column decoder sense amplifier & i(o) bus sense amplifier & i(o) bus column decoder 1024 x 8 bit 8192 x bank 0 1024 x 8 bit bank 1 8192 x row memory array decoder row decoder array memory input buffer output buffer dq0 - dq7 control logic & timing generator clk cke cs ras cas we dqm v ref *) *) on sstl versions only spb03780
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 6 1998-10-01 block diagram for 16 m 16 sdram (13/9/2 addressing) a0 - a8, ap, ba0, ba1 column addresses address buffer column address counter column a0 - a12, ba0, ba1 row addresses row address buffer counter refresh column decoder sense amplifier & i(o) bus 512 x 8192 x bank 3 decoder array memory row 16 bit sense amplifier & i(o) bus column decoder 512 x 16 bit bank 2 8192 x row decoder array memory column decoder sense amplifier & i(o) bus sense amplifier & i(o) bus column decoder 512 x 16 bit 8192 x bank 0 512 x 16 bit bank 1 8192 x row memory array decoder row decoder array memory input buffer output buffer dq0 - dq15 control logic & timing generator clk cke cs ras cas we dqmu dqml v ref *) *) on sstl versions only spb03779
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 7 1998-10-01 signal pin description pin type signal polarity function clk input pulse positive edge the system clock input. all of the sdram inputs are sampled on the rising edge of the clock. cke input level active high activates the clk signal when high and deactivates the clk signal when low, thereby initiates either the power down mode, suspend mode, or the self refresh mode. cs input pulse active low cs enables the command decoder when low and disables the command decoder when high. when the command decoder is disabled, new commands are ignored but previous operations continue. ras cas we input pulse active low when sampled at the positive rising edge of the clock, cas , ras , and we define the command to be executed by the sdram. a0 - a12 input level C during a bank activate command cycle, a0 - a12 defines the row address (ra0 - ra12) when sampled at the rising clock edge. during a read or write command cycle, a0 - an defines the column address (ca0 - can) when sampled at the rising clock edge. can depends from the sdram organization: 64m 4 sdram can = ca9, ca11 (page length = 2048 bits) 32m 8 sdram can = ca9 (page length = 1024 bits) 16m 16 sdram can = ca8 (page length = 512 bits) in addition to the column address, a10 (= ap) is used to invoke autoprecharge operation at the end of the burst read or write cycle. if a10 is high, autoprecharge is selected and ba0, ba1 defines the bank to be precharged. if a10 is low, autoprecharge is disabled. during a precharge command cycle, a10 (= ap) is used in conjunction with ba0 and ba1 to control which bank(s) to precharge. if a10 is high, all four banks will be precharged regardless of the state of ba0 and ba1. if a10 is low, then ba0 and ba1 are used to define which bank to precharge. ba0 ba1 input level C bank select (bs) inputs. selects which bank is to be active. dqx input out- put level C data input/output pins operate in the same manner as on conventional drams.
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 8 1998-10-01 dqm ldqm udqm input pulse active high the data input/output mask places the dq buffers in a high impedance state when sampled high. in read mode, dqm has a latency of two clock cycles and controls the output buffers like an output enable. in write mode, dqm has a latency of zero and operates as a word mask by allowing input data to be written if it is low but blocks the write operation if dqm is high. one dqm input it present in 4 and 8 sdrams, ldqm and udqm controls the lower and upper bytes in 16 sdrams. v dd , v ss supply C C power and ground for the input buffers and the core logic. v ddq v ssq supply C C isolated power supply and ground for the output buffers to provide improved noise immunity. signal pin description pin type signal polarity function
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 9 1998-10-01 operation definition all of sdram operations are defined by states of control signals cs , ras , cas , we , and dqm at the positive edge of the clock. the following list shows the truth table for the operation commands. notes 1. v = valid, x = dont care, l = low level, h = high level. 2. cken signal is input level when commands are provided, cken-1 signal is input level one clock before the commands are provided. 3. this is the state of the banks designated by bs0, bs1 signals. 4. device state is full page burst operation. 5. power down mode can not entry in the burst cycle. when this command assert in the burst mode cycle device is clock suspend mode. operation device state cke n-1 cke n dqm bs0 bs1 ap = a10 addr cs ras cas we bank active idle 3 hxxvvvl lhh bank precharge any h x x vlxllhl precharge all any h x x x h x l l h l write active 3 hxxvlvlhll write with auto precharge active 3 hxxvhvlhl l read active 3 hxxvlvlhlh read with auto precharge active 3 hxxvhvlhlh mode register set idle h xxvvv llll no operation any h xxxxxlhhh burst stop active 4 hxxxxxlhhl device deselect any h xxxxxhxxx auto refresh idle h h xxxxl l lh self refresh entry idle h l xxxxl l lh self refresh exit idle (self refr.) lhxxxx hxxx lhhx clock suspend entry active h l xxxxxxxx power down entry (precharge or active standby) idle active 5 hlxxxx hxxx lhhx clock suspend exit active l h xxxxxxxx power down exit any (power down) lhxxxx hxxx lhhl data write/output enable active h x l xxxxxxx data write/output disable active hxhxxxxxxx
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 10 1998-10-01 address input for mode set (mode register operation) ba1 ba0 a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 operation mode cas latency bt burst length address bus (ax) mode register (mx) operation mode ba1 mode burst read / burst write 0 single write burst read / 0 burst type m3 type sequential interleave 0 1 m6 m5 m4 latency cas latency 000 reserved 00 1 reserved 0 1 0 2 0 11 3 1 00 4 1 0 1 11 0 reserved 111 address input for mode set (mode register operation) 1 1 1 1 0 0 0 0 m2 1 2 reserved 0 0 1 1 1 0 0 1 1 0 1 1 1 0 0 m1 0 m0 8 4 length burst length sequential interleave reserved 1 2 4 8 spb03941
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 11 1998-10-01 power on and initialization the default power on state of the mode register is supplier specific and may be undefined. the following power on and initialization sequence guarantees the device is preconditioned to each users specific needs. like a conventional dram, the synchronous dram must be powered up and initialized in a predefined manner.during power on, all v dd and v ddq pins must be built up simultaneously to the specified voltage when the input signals are held in the nop state. the power on voltage must not exceed v dd + 0.3 v on any of the input pins or v dd supplies. the clk signal must be started at the same time. after power on, an initial pause of 200 m s is required followed by a precharge of both banks using the precharge command. to prevent data contention on the dq bus during power on, it is required that the dqm and cke pins be held high during the initial pause period. once all banks have been precharged, the mode register set command must be issued to initialize the mode register. a minimum of eight auto refresh cycles (cbr) are also required.these may be done before or after programming the mode register. failure to follow these steps may lead to unpredictable start-up modes. programming the mode register the mode register designates the operation mode at the read or write cycle. this register is divided into 4 fields. a burst length field to set the length of the burst, an addressing selection bit to program the column access sequence in a burst cycle (interleaved or sequential), a cas latency field to set the access time at clock cycle and a operation mode field to differentiate between normal operation (burst read and burst write) and a special burst read and single write mode. the mode set operation must be done before any activate command after the initial power up. any content of the mode register can be altered by re-executing the mode set command. all banks must be in precharged state and cke must be high at least one clock before the mode set operation. after the mode register is set, a standby or nop command is required. low signals of ras , cas , and we at the positive edge of the clock activate the mode set operation. address input data at this timing defines parameters to be set as shown in the previous table. read and write operation when ras is low and both cas and we are high at the positive edge of the clock, a ras cycle starts. according to address data, a word line of the selected bank is activated and all of sense amplifiers associated to the wordline are set. a cas cycle is triggered by setting ras high and cas low at a clock timing after a necessary delay, t rcd , from the ras timing. we is used to define either a read (we = h) or a write (we = l) at this stage. sdram provides a wide variety of fast access modes. in a single cas cycle, serial data read or write operations are allowed at up to a 143 mhz data rate. the numbers of serial data bits are the burst length programmed at the mode set operation, i.e., one of 1, 2, 4, 8 and full page. column addresses are segmented by the burst length and serial data accesses are done within this boundary. the first column address to be accessed is supplied at the cas timing and the subsequent addresses are generated automatically by the programmed burst length and its sequence. for example, in a burst length of 8 with interleave sequence, if the first address is 2, then the rest of the burst sequence is 3, 0, 1, 6, 7, 4, and 5. full page burst operation is only possible using the sequential burst type and page length is a function of the i/o organization and column addressing. full page burst operation do not self
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 12 1998-10-01 terminate once the burst length has been reached. in other words, unlike burst length of 2, 3 or 8, full page burst continues until it is terminated using another command. similar to the page mode of conventional drams, burst read or write accesses on any column address are possible once the ras cycle latches the sense amplifiers. the maximum t ras or the refresh interval time limits the number of random column accesses. a new burst access can be done even before the previous burst ends. the interrupt operation at every clock cycle is supported. when the previous burst is interrupted, the remaining addresses are overridden by the new address with the full burst length. an interrupt which accompanies an operation change from a read to a write is possible by exploiting dqm to avoid bus contention. when two or more banks are activated sequentially, interleaved bank read or write operations are possible. with the programmed burst length, alternate access and precharge operations on two or more banks can realize fast serial data access modes among many different pages. once two or more banks are activated, column to column interleave operation can be done between different pages. refresh mode sdram has two refresh modes, auto refresh and self refresh. auto refresh is similar to the cas -before-ras refresh of conventional drams. all of banks must be precharged before applying any refresh mode. an on-chip address counter increments the word and the bank addresses and no bank information is required for both refresh modes. the chip enters the auto refresh mode, when ras and cas are held low and cke and we are held high at a clock timing. the mode restores word line after the refresh and no external precharge command is necessary. a minimum t rc time is required between two automatic refreshes in a burst refresh mode. the same rule applies to any access command after the automatic refresh operation. burst length and sequence burst length starting address (a2 a1 a0) sequential burst addressing (decimal) interleave burst addressing (decimal) 2 xx0 xx1 0, 1 1, 0 0, 1 1, 0 4 x00 x01 x10 x11 0, 1, 2, 3 1, 2, 3, 0 2, 3, 0, 1 3, 0, 1, 2 0, 1, 2, 3 1, 0, 3, 2 2, 3, 0, 1 3, 2, 1, 0 8 000 001 010 011 100 101 110 111 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 0 2 3 4 5 6 7 0 1 3 4 5 6 7 0 1 2 4 5 6 7 0 1 2 3 5 6 7 0 1 2 3 4 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 1 0 3 2 5 4 7 6 2 3 0 1 6 7 4 5 3 2 1 0 7 6 5 4 4 5 6 7 0 1 2 3 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 13 1998-10-01 the chip has an on-chip timer and the self refresh mode is available. it enters the mode when ras , cas , and cke are low and we is high at a clock timing. all of external control signals including the clock are disabled. returning cke to high enables the clock and initiates the refresh exit operation. after the exit command, at least one t rc delay is required prior to any access command. dqm function dqm has two functions for data i/o read and write operations. during reads, when it turns to high at a clock timing, data outputs are disabled and become high impedance after two clock delay (dqm data disable latency t dqz ). it also provides a data mask function for writes. when dqm is activated, the write operation at the next clock is prohibited (dqm write mask latency t dqw = zero clocks). suspend mode during normal access mode, cke is held high enabling the clock. when cke is low, it freezes the internal clock and extends data read and write operations. one clock delay is required for mode entry and exit (clock suspend latency t csl ). power down in order to reduce standby power consumption, a power down mode is available. all banks must be precharged and the necessary precharge delay ( t rp ) must occur before the sdram can enter the power down mode. once the power down mode is initiated by holding cke low, all of the receiver circuits except clk and cke are gated off. the power down mode does not perform any refresh operations, therefore the device cant remain in power down mode longer than the refresh period ( t ref ) of the device. exit from this mode is performed by taking cke high. one clock delay is required for mode entry and exit. auto precharge two methods are available to precharge sdrams. in an automatic precharge mode, the cas timing accepts one extra address, ca10, to determine whether the chip restores or not after the operation. if ca10 is high when a read command is issued, the read with auto-precharge function is initiated. the sdram automatically enters the precharge operation one clock before the last data out for cas latencies 2, two clocks for cas latencies 3 and three clocks for cas latencies 4. if cas10 is high when a write command is issued, the write with auto-precharge function is initiated. the sdram automatically enters the precharge operation a time delay equal to t wr (write recovery time) after the last data in. precharge command there is also a separate precharge command available. when ras and we are low and cas is high at a clock timing, it triggers the precharge operation. three address bits, ba0, ba1 and a10 are used to define banks as shown in the following list. the precharge command can be imposed one clock before the last data out for cas latency = 2, two clocks before the last data out for cas latency = 3 and three clocks before the last data out for cas latency = 4. writes require a time delay t wr from the last data out to apply the precharge command.
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 14 1998-10-01 burst termination once a burst read or write operation has been initiated, there are several methods in which to terminate the burst operation prematurely. these methods include using another read or write command to interrupt an existing burst operation, use a precharge command to interrupt a burst cycle and close the active bank, or using the burst stop command to terminate the existing burst operation but leave the bank open for future read or write commands to the same page of the active bank. when interrupting a burst with another read or write command care must be taken to avoid dq contention. the burst stop command, however, has the fewest restrictions making it the easiest method to use when terminating a burst operation before it has been completed. if a burst stop command is issued during a burst write operation, then any residual data from the burst write cycle will be ignored. data that is presented on the dq pins before the burst stop command is registered will be written to the memory. bank selection by address bits a10 ba0 ba1 0 0 0 bank 0 0 0 1 bank 1 0 1 0 bank 2 0 1 1 bank 3 1 x x all banks
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 15 1998-10-01 absolute maximum ratings operating temperature range .........................................................................................0 to + 70 c storage temperature range..................................................................................... C 55 to + 150 c input/output voltage .......................................................................................... C 0.3 to v cc + 0.3 v power supply voltage v dd / v ddq ............................................................................. C 0.3 to + 4.6 v power dissipation.............................................................................................................. ......... 1 w data out current (short circuit) ............................................................................................... . 50 ma note: stresses above those listed under absolute maximum ratings may cause permanent damage of the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. notes 1. all voltages are referenced to v ss . 2. v ih may overshoot to v cc + 2.0 v for pulse width of < 4ns with 3.3v. v il may undershoot to -2.0 v for pulse width < 4.0 ns with 3.3 v. pulse width measured at 50% points with amplitude measured peak to dc reference. recommended operation and characteristics for lv-ttl versions t a = 0 to 70 c; v ss = 0 v; v dd , v ddq = 3.3 v 0.3 v parameter symbol limit values unit notes min. max. input high voltage v ih 2.0 v cc + 0.3 v 1, 2 input low voltage v il C 0.3 0.8 v 1, 2 output high voltage ( i out = C 2.0 ma) v oh 2.4 C v 3 output low voltage ( i out = 2.0 ma) v ol C 0.4 v 3 input leakage current, any input (0 v < v in < v ddq , all other inputs = 0 v) i i(l) C 5 5 m a output leakage current (dq is disabled, 0 v < v out < v cc ) i o(l) C 5 5 m a capacitance t a = 0 to 70 c; v dd = 3.3 v 0.3 v, f = 1 mhz parameter symbol values unit min. max. input capacitance (clk) c i1 2.5 4.0 pf input capacitance (a0 - a12, ba0, ba1, ras , cas , we , cs , cke, dqm) c i2 2.5 5.0 pf input/output capacitance (dq) c io 4.0 6.5 pf
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 16 1998-10-01 notes 3. these parameters depend on the cycle rate. these values are measured at 100 mhz for -8 and at 66 mhz for -10 parts. input signals are changed once during t ck , excepts for icc6 and for standby currents when t ck = infinity. 4. these parameters are measured with continuous data stream during read access and all dq toggling. cl = 3 and bl = 4 is assumed and the v ddq current is excluded. operating currents t a = 0 to 70 c, v dd = 3.3 v 0.3 v (recommended operating conditions unless otherwise noted) parameter & test condition symbol -8/-8b -10 unit note max. operating current t rc = t rcmin. , t ck = t ckmin. outputs open, burst lengt = 4, cl = 3 all banks operated in random access all banks operated in ping-pong manner to maximize gapless data access i cc1 x4 x8 x16 210 210 210 165 165 165 ma ma ma 3 precharge standby current in power down mode cs = v ih(min.) , cke v il(max.) t ck = min. i cc2p 22ma 3 precharge standby current in non-power down mode cs = v ih(min.) , cke v ih(max.) t ck = min. i cc2n 19 16 ma 3 no operating current t ck = min., cs = v ih(min.) , active state (max. 4 banks) cke 3 v ih(min.) i cc3n 45 40 ma 3 cke v il(max.) i cc3p 10 10 ma 3 burst operating current t ck = min., read command cycling i cc4 x4 x8 x16 210 210 210 165 165 165 ma ma ma 3, 4 auto refresh current t ck = min., auto refresh command cycling i cc5 240 195 ma 3 self refresh current self refresh mode, cke = 0.2 v i cc6 2.5 2.5 ma 3
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 17 1998-10-01 ac characteristics 1, 2, 3 t a = 0 to 70 c; v ss = 0 v; v dd = 3.3 v 0.3 v, t t = 1 ns parameter symb. limit values unit note -8 -8b -10 min. max. min. max. min. max. clock and clock enable clock cycle time cas latency = 3 cas latency = 2 t ck 8 10 C C 10 12 C C 10 15 C C ns ns clock frequency cas latency = 3 cas latency = 2 t ck C C 125 100 100 83 C C 100 66 mhz mhz access time from clock cas latency = 3 cas latency = 2 t ac C C 6 6 6 7 C C 7 8 ns ns 2, 4 clock high pulse width t ch 3C3C3Cns clock low pulse width t cl 3C3C3Cns transition time t t 0.5 10 0.5 10 0.5 10 ns setup and hold times input setup time t is 2C2C2.5Cns 5 input hold time t ih 1C1C1Cns 5 cke setup time t cks 2C2C2.5Cns 5 cke hold time t ckh 1C1C1Cns 5 mode register setup time t rsc 16 C 20 C 20 C ns power down mode entry time t sb 08010010ns common parameters row to column delay time t rcd 20 C 20 C 30 C ns 6 row precharge time t rp 20 C 30 C 30 C ns 6 row active time t ras 50 100k 60 100k 60 100k ns 6 row cycle time t rc 70 C 80 C 90 C ns 6 activate (a) to activate (b) command period t rrd 16 C 20 C 20 C ns 6 cas (a) to cas (b) command period t ccd 1C1C1Cclk
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 18 1998-10-01 refresh cycle refresh period (8192 cycles) t ref C64C64C64ms self refresh exit time t srex 10 C 10 C 10 C ns read cycle data out hold time t oh 3C3C3Cns 2 data out to low impedance time t lz 0C0C0Cns data out to high impedance time t hz 38310310ns 8 dqm data out disable latency t dqz C2C2C2clk write cycle data input to precharge t wr 2C2C2Cclk dqm write mask latency t dqw 0C0C0Cclk ac characteristics 1, 2, 3 (contd) t a = 0 to 70 c; v ss = 0 v; v dd = 3.3 v 0.3 v, t t = 1 ns parameter symb. limit values unit note -8 -8b -10 min. max. min. max. min. max.
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 19 1998-10-01 notes for ac parameters 1. for proper power-up see the operation section of this data sheet. 2. ac timing tests for lv-ttl versions have v il = 0.4 v and v ih = 2.4 v with the timing referenced to the 1.4 v crossover point. the transition time is measured between v ih and v il . all ac measurements assume t t = 1 ns with the ac output load circuit shown in figure 1 . specified t ac and t oh parameters are measured with a 50 pf only, without any resistive termination and with an input signal of 1 v/ns edge rate between 0.8 v and 2.0 v. figure 1 3. ac timing test conditions for sstl_3 versions figure 2 termination voltage 0.45 v ccq reverence level of output signals ( v ref ) 0.45 v ccq output load see figure 2 transition time (rise and fall) of input signals 1 ns reference level of input signals ( v ref ) 0.45 v ccq 50 pf i/o measurement conditions for t ac and t oh spt03404 clock 2.4 v 0.4 v input hold t setup t t t output 1.4 v t lz ac t t ac oh t hz t 1.4 v cl t ch t sps03410 output v w 50 pf 30 50 w = z tt +
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 20 1998-10-01 4. if clock rising time is longer than 1 ns, a time ( t t /2 C 0.5) ns has to be added to this parameter. 5. if t t is longer than 1 ns, a time ( t t C 1) ns has to be added to this parameter. 6. these parameter account for the number of clock cycle and depend on the operating frequency of the clock, as follows: the number of clock cycle = specified value of timing period (counted in fractions as a whole number) self refresh exit is a synchronous operation and begins on the 2nd positive clock edge after cke returns high. self refresh exit is not complete until a time period equal to t rc is satisfied once the self refresh exit command is registered.
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 21 1998-10-01 package outlines gpx09039 22.22 0.13 1) 127 54 28 0.35 +0.1 -0.05 0.1 1 0.1 10.16 0.13 0.2 11.76 0.1 0.5 does not include plastic or metal protrusion of 0.15 max per side 1) 54x 0.05 0.05 0.15 -0.03 +0.06 15? 5? 15? 5? 6 max 2.5 max 2) 3) does not include plastic protrusion of 0.25 max per side 2) does not include dambar protrusion of 0.13 max per side 3) index marking 0.8 20.8 26x 0.8 = 0.2 m 54x plastic package p-tsopii-54 (400 mil, 0.8 mm lead pitch) thin small outline package, smd sorts of packing package outlines for tubes, trays etc. are contained in our data book package information. dimensions in mm smd = surface mounted device
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 22 1998-10-01 timing diagrams 1 bank activate command cycle 2 burst read operation 3 read interrupted by a read 4 read to write interval 4.1 read to write interval 4.2 minimum read to write interval 4.3 non-minimum read to write interval 5 burst write operation 6 write and read interrupt 6.1 write interrupted by a write 6.2 write interrupted by a read 7 burst write and read with auto precharge 7.1 burst write with auto precharge 7.2 burst read with auto precharge 8 burst termination 8.1 termination of a full page burst read operation 8.2 termination of a full page burst write operation 9 ac parameters 9.1 ac parameters for a write timing 9.2 ac parameters for a read timing 10 mode register set 11 power on sequence and auto refresh (cbr) 12 clock suspension (using cke) 12.1 clock suspension during burst read cas latency = 2 12.2 clock suspension during burst read cas latency = 3 12.3 clock suspension during burst write cas latency = 2 12.4 clock suspension during burst write cas latency = 3 13 power down mode and clock suspend 14 self refresh (entry and exit) 15 auto refresh (cbr) 16 random column read (page within same bank) 16.1 cas latency = 2 16.2 cas latency = 3
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 23 1998-10-01 timing diagrams (contd) 17 random column write (page within same bank) 17.1 cas latency = 2 17.2 cas latency = 3 18 random row read (interleaving banks) with precharge 18.1 cas latency = 2 18.2 cas latency = 3 19 random row write (interleaving banks) with precharge 19.1 cas latency = 2 19.2 cas latency = 3 20 full page read cycle 20.1 cas latency = 2 20.2 cas latency = 3 21 full page write cycle 21.1 cas latency = 2 21.2 cas latency = 3 22 precharge termination of a burst 22.1 cas latency = 2 22.2 cas latency = 3
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 24 1998-10-01 1. bank activate command cycle rc "h" or "l" t t0 (cas latency = 3) bank b row addr. activate bank b address command clk t nop nop rcd t t1 col. addr. bank b with auto precharge write b t spt03784 bank b row addr. activate bank b row addr. bank a activate bank a t nop rrd t tt
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 25 1998-10-01 2. burst read operation spt03712 clk read a nop t0 t1 t2 t3 t4 t5 t6 t7 t8 command nop nop nop nop nop nop nop dout a3 ck2 latency = 2 t , dq's dout a1 dout a0 dout a2 dout a2 ck3 latency = 3 t , dq's dout a0 dout a1 dout a3 (burst length = 4, cas latency = 2, 3) cas cas
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 26 1998-10-01 3. read interrupted by a read spt03713 clk read a t0 t1 t2 t3 t4 t5 t6 t7 t8 command dout a0 dout b0 dout b1 dout b2 nop nop nop nop nop nop nop latency = 2 , dq's ck2 t ck3 latency = 3 t , dq's (burst length = 4, cas latency = 2, 3) cas cas read b dout b3 dout b1 dout a0 dout b0 dout b3 dout b2
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 27 1998-10-01 4. read to write interval 4.1. read to write interval commands = 4 + 1 = 5 cycles minimum delay between the read and write dout a0 dq's (burst length = 4, cas latency = 3) dqmx command clk nop read a t0 t1 nop nop t2 t3 the write command must be hi-z before din b0 din b1 spt03787 din b2 dqw nop dqz t nop t t4 t5 write b nop t6 t7 nop t8 "h" or "l" write latency of dqmx
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 28 1998-10-01 4.2. minimum read to write interval 4.3. non-minimum read to write interval the write command must be hi-z before activate cas ck2 latency = 2 t , dq's (burst length = 4, cas latency = 2) clk dqmx command nop t0 t1 bank a nop dqz t t2 t3 din a0 din a1 din a2 spt03413 din a3 1 clk interval read a write a t4 t5 nop nop t6 t7 nop t8 "h" or "l" of dqmx write latency t dqw nop cas latency = 3 ck3 cas ck2 latency = 2 t t , dq's , dq's dout a0 (burst length = 4, cas latency = 2, 3) clk dqm command nop read a t0 t1 nop nop t2 t3 the write command must be hi-z before dout a0 dout a1 din b0 din b0 din b1 din b1 spt03940 din b2 din b2 read a dqz t nop t4 t5 write b nop t6 t7 nop t8 "h" or "l" t dqw
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 29 1998-10-01 5. burst write operation extra data is ignored after termination of a burst. din a3 t4 are registered on the same clock edge. the first data element and the write nop (burst length = 4, cas latency = 2, 3) t0 command dq's clk din a1 t2 nop din a0 write a t1 din a2 nop t3 spt03790 t6 nop nop t5 nop nop t7 nop t8 don't care
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 30 1998-10-01 6. write and read interrupt 6.1. write interrupted by a write 6.2. write interrupted by a read spt03791 clk t0 t1 t2 t3 t4 t5 t6 t7 t8 command nop nop nop nop nop nop dq's (burst length = 4, cas latency = 2, 3) nop write a din a0 din b0 din b1 din b2 din b3 write b 1 clk interval t5 nop dout b1 dout b0 input data for the write is ignored. , dq's latency = 3 ck3 cas t don't care din a0 don't care (burst length = 4, cas latency = 2, 3) clk , dq's command latency = 2 ck2 cas t nop t0 din a0 write a don't care read b t1 t2 dout b0 nop nop t4 t3 spt03719 appears on the outputs to avoid data contention. dout b2 input data must be removed from the dq's at least one clock cycle before the read data dout b1 dout b3 nop dout b3 nop dout b2 t6 t7 nop t8
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 31 1998-10-01 7. burst write and read with auto precharge 7.1. burst write with auto precharge 7.2. burst read with auto precharge spt03909 clk active nop t0 t1 t2 t3 t4 t5 t6 t7 t8 command nop nop nop nop nop nop dq's (burst length = 2, cas latency = 2, 3) bank a rp t begin auto precharge bank can be reactivated after write a auto precharge wr t din a1 din a0 rp t spt03721 clk with ap nop t0 t1 t2 t3 t4 t5 t6 t7 t8 command dout a0 dout a1 dout a2 dout a3 nop nop nop nop nop nop nop latency = 2 , dq's ck2 t dout a3 ck3 latency = 3 t , dq's dout a1 dout a0 dout a2 (burst length = 4, cas latency = 2, 3) cas cas read a rp t rp t bank can be reactivated after begin auto precharge rp t
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 32 1998-10-01 8. burst termination 8.1. termination of a full page burst read operation 8.2. termination of a full page burst write operation spt03722 clk nop t0 t1 t2 t3 t4 t5 t6 t7 t8 command dout a0 dout a1 dout a2 dout a3 nop nop burst nop nop nop nop latency = 2 , dq's ck2 t dout a3 ck3 latency = 3 t , dq's dout a1 dout a0 dout a2 (cas latency = 2, 3) cas cas read a the burst ends after a delay equal to the cas latency. terminate input data for the write is masked. t4 latency = 2, 3 dq's nop (cas latency = 2, 3) t0 command cas clk din a1 t2 nop din a0 write a t1 din a2 nop t3 spt03419 t6 burst terminate nop t5 nop nop t7 nop t8 don't care
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 33 1998-10-01 9. ac parameters 9.1. ac parameters for write timing auto precharge bank b command write with activate write with activate bank a command auto precharge bank a command command bank b addr. ap dqm dq bs hi-z rcd t ax2 ax1 ax0 ax3 rc t rax rax t as t ah rbx rbx cax activate precharge activate write command command bank a bank a command bank a bank a command spt03910 bx2 bx1 bx0 bx3 ds t t dh ay2 ay1 ay0 ay3 t wr ray ray cbx ray rp t raz raz t8 precharge begin auto bank a clk we cas ras cs cke ck2 t cs t ch cks t ch t t cl t t3 t0 t2 t1 t4 t5 t7 t6 bank b precharge begin auto t ckh t18 burst length = 4, cas latency = 2 t13 t9 t10 t12 t11 t14 t15 t17 t16 t19 t20 t22 t21 rby rby rrd t activate bank b command
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 34 1998-10-01 9.2. ac parameters for a read timing y ac2 hi-z dq activate command bank a read with bank a command auto precharge dqm addr. ap t rcd t lz t t as rax rax t ah cax rrd t command bank b read with auto precharge activate bank b command ax1 ax0 bx0 activate spt03911 command bank a bx1 t ac2 oh t hz t t ras rc t rbx rbx rbx hz t ray ray t5 t t bs we cas ras t cs cke cks t ch t t cs ch cl ck2 clk t0 t1 t2 t3 t4 precharge bank a begin auto precharge bank b begin auto t ckh burst length = 2, cas latency = 2 t6 t7 t8 t10 t9 t11 t13 t12 rp t precharge bank a command
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 35 1998-10-01 10. mode register set set command mode register all banks precharge command any command address key t0 t1 t2 t8 rsc t t4 t3 t5 t6 t7 t11 t9 t10 t12 t13 spt03912 t19 t16 t15 t14 t17 t18 cas latency = 2 t20 t21 t22 bs0, bs1 a0-a9 a10, a11 cs we cas ras cke clk
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 36 1998-10-01 11. power on sequence and auto refresh (cbr) inputs must be 200 stable for m s dqm ap dq addr. bs rp command all banks precharge hi-z ~ ~ t 1st auto refresh command ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ spt03913 mode register set command address key 8th auto refresh command ~ ~ t rc ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ command any minimum of 8 refresh cycles are required t8 we cas ras cs cke clk required ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ t3 is ~ ~ ~ ~ level high t0 t2 t1 t5 t4 t7 t6 t18 2 clock min. ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ t13 ~ ~ ~ ~ t10 t9 t12 t11 t14 t15 t17 t16 t20 t19 t22 t21
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 37 1998-10-01 12. clock suspension (using cke) 12.1. clock suspension during burst read cas latency = 2 command bank a dqm addr. dq ap bs read command bank a activate hi-z suspend 1 cycle clock ax0 csl t ax1 cax rax rax spt03914 t suspend 3 cycles suspend 2 cycles clock ax2 csl t clock ax3 hz t7 we cas ras cs cke clk ck2 t t0 t1 t2 t3 t4 t6 t5 t16 t8 t9 t10 t11 t14 t12 t13 t15 burst length = 4, cas latency = 2 t18 t17 t19 t20 t21 t22 csl t
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 38 1998-10-01 12.2. clock suspension during burst read cas latency = 3 csl dqm addr. dq ap bs bank a activate command hi-z command bank a read ax0 t rax rax cax hz t t suspend 1 cycle clock suspend 2 cycles clock csl ax1 ax2 clock suspend 3 cycles t csl ax3 spt03915 t7 we cas ras cs cke clk ck3 t t0 t1 t2 t3 t4 t6 t5 t16 t8 t9 t10 t11 t14 t12 t13 t15 burst length = 4, cas latency = 3 t18 t17 t19 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 39 1998-10-01 12.3. clock suspension during burst write cas latency = 2 bank a dqm addr. dq ap bs dax0 command write activate command bank a hi-z clock clock 1 cycle suspend suspend 2 cycles dax1 cax rax rax dax3 clock suspend 3 cycles dax2 spt03916 t7 we cas ras cs cke clk ck2 t t0 t1 t2 t3 t4 t6 t5 t16 t8 t9 t10 t11 t14 t12 t13 t15 burst length = 4, cas latency = 2 t18 t17 t19 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 40 1998-10-01 12.4. clock suspension during burst write cas latency = 3 clock suspend 2 cycles bank a dqmx addr. dq a8/ap ba activate command bank a hi-z clock 1 cycle suspend command write dax0 dax1 rax rax cax clock suspend 3 cycles dax2 dax3 spt03917 t7 we cas ras cs cke clk ck3 t t0 t1 t2 t3 t4 t6 t5 t16 t8 t9 t10 t11 t14 t12 t13 t15 burst length = 4, cas latency = 3 t18 t17 t19 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 41 1998-10-01 13. power down mode and clock suspend bs clock suspend clock suspend mode entry mode exit addr. dqm dq ap standby active activate bank a command hi-z read command bank a rax rax cax power down power down mode exit mode entry spt03918 end clock mask clock mask start ax0 ax1 ax2 precharge command bank a ax3 t hz precharge standby any command t7 cas we ras cs cke clk ck2 t t0 t1 t2 cks t t3 t4 t6 t5 t16 t8 t9 t10 t11 t14 t12 t13 t15 burst length = 4, cas latency = 2 cks t t18 t17 t19 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 42 1998-10-01 14. self refresh (entry and exit) bs t self refresh exit command issued addr. dqm dq ap entry self refresh must be idle all banks hi-z ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ spt03919 exit command begin self refresh srex t rc self refresh command exit any t7 cs cas we ras cke clk ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ t cks t0 t1 t2 ~ ~ ~ ~ t3 t4 ~ ~ ~ ~ t6 t5 t16 cks t t8 t9 t10 t11 t14 t12 t13 t15 t18 t17 t19 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 43 1998-10-01 15. auto refresh (cbr) (minimum interval) addr. dqm dq ap bs auto refresh command all banks precharge command hi-z t rp t rc spt03920 command command auto refresh command bank a activate rc t rax rax ax2 bank a read ax0 ax1 ax3 cax t7 we cas ras cs cke clk ck2 t t0 t1 t2 t3 t4 t6 t5 t16 t8 t9 t10 t11 t14 t12 t13 t15 burst length = 4, cas latency = 2 t18 t17 t19 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 44 1998-10-01 16. random column read (page within same bank) 16.1. cas latency = 2 ay1 addr. bs dq dqm ap activate command z hi bank a raw raw command read command bank a read bank a aw0 aw1 caw cax read bank a command aw3 aw2 ax0 ax1 ay0 cay cs we cas ras cke clk t0 ck2 t t1 t2 t8 t4 t3 t5 t6 t7 t11 t9 t10 t12 t13 precharge command bank a ay2 ay3 activate command bank a raz raz spt03921 read bank a command caz burst length = 4, cas latency = 2 t19 t16 t15 t14 t17 t18 t20 t21 t22 az3 az0 az1 az2
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 45 1998-10-01 16.2. cas latency = 3 ay3 caw addr. bs dq dqm ap z hi bank a activate command read command bank a raw raw bank a command aw1 aw0 read bank a command aw2 aw3 cax read ax1 ax0 ay0 precharge command bank a ay1 ay2 cay cs we cas ras cke clk t0 ck3 t t1 t2 t8 t4 t3 t5 t6 t7 t11 t9 t10 t12 t13 bank a read command activate command bank a raz raz caz spt03922 burst length = 4, cas latency = 3 t19 t16 t15 t14 t17 t18 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 46 1998-10-01 17. random column write (page within same bank) 17.1. cas latency = 2 dby1 addr. bs dq dqm ap activate command z hi bank a raw raw command write command bank b write bank b dbw0 dbw1 caw cax write bank b command dbw3 dbw2 dbx0 dbx1 dby0 cay cs we cas ras cke clk t0 ck2 t t1 t2 t8 t4 t3 t5 t6 t7 t11 t9 t10 t12 t13 precharge command bank b dby2 dby3 activate command bank b raz raz spt03923 read bank b command caz burst length = 4, cas latency = 2 t19 t16 t15 t14 t17 t18 t20 t21 t22 dbz1 dbz0 dbz2 dbz3
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 47 1998-10-01 17.2. cas latency = 3 command write bank b cbz dbw0 addr. bs dq dqm ap bank b activate command z hi rbz rbz command bank b dbw3 dbw1 dbw2 write bank b command dbx0 dbx1 cbx write dby1 dby0 dby2 precharge command bank b dby3 cby cs we cas ras cke clk t0 ck3 t t1 t2 t8 t4 t3 t5 t6 t7 t11 t9 t10 t12 t13 command bank b dbz0 activate command bank b write dbz1 rbz rbz cbz spt03924 burst length = 4, cas latency = 3 t19 t16 t15 t14 t17 t18 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 48 1998-10-01 18. random row read (interleaving banks) with precharge 18.1. cas latency = 2 ax2 t bs addr. dq dqm ap bank b activate command hi-z command read bank b rbx rbx rcd t cbx read activate bank a command command bank b command bx2 bx0 ac2 bx1 bank a activate bx3 bx4 rax rax command precharge bank b bx6 bx5 bx7 ax0 ax1 cax rp t rby rby cs we cas ras cke clk t0 high t ck2 t1 t2 t8 t4 t3 t5 t6 t7 t11 t9 t10 t12 t13 spt03925 bank b command ax5 ax3 ax4 read ax6 ax7 cby by1 by0 burst length = 8, cas latency = 2 t19 t16 t15 t14 t17 t18 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 49 1998-10-01 18.2. cas latency = 3 activate command bank a addr. dqm dq ap bs read bank b command command bank b activate hi-z bx1 bx0 cbx rbx rcd t rbx t ac3 activate command bank b bx6 bank a command read bx4 bx3 bx2 bx5 bank b precharge command ax0 bx7 ax2 ax1 rax cax rax rp t rby rby precharge bank a command ax7 read bank b command ax5 ax4 ax3 ax6 spt03926 by0 cby t7 we cas ras cs cke clk high ck3 t t0 t1 t2 t3 t4 t6 t5 t16 t8 t9 t10 t11 t14 t12 t13 t15 burst length = 8, cas latency = 3 t18 t17 t19 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 50 1998-10-01 19. random row write (interleaving banks) with precharge 19.1. cas latency = 2 dbx4 dax1 bs ap addr. dq dqm activate command bank a hi-z write command bank a dax0 rax rax rcd t cax command command bank b bank a command dax4 dax2 dax3 bank b activate dax5 dax6 rbx rbx command precharge bank a write dbx0 dax7 dbx1 activate dbx2 dbx3 wr cbx t rp t ray ray clk cke cs ras cas we t0 high ck2 t t1 t2 t8 t4 t3 t5 t6 t7 t11 t9 t10 t12 t13 command bank a spt03927 command precharge bank b dbx7 dbx5 dbx6 write day0 day1 cay wr t day4 day3 day2 t19 burst length = 8, cas latency = 2 t16 t15 t14 t17 t18 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 51 1998-10-01 19.2. cas latency = 3 dax4 addr. dqm dq ap bs command bank a bank a activate command hi-z write dax0 dax1 dax3 dax2 rax rcd t rax cax dbx4 dbx0 write command bank b bank b activate command dax6 dax5 dax7 precharge command bank a dbx2 dbx1 dbx3 cbx rbx rbx wr t rp t command bank a activate command bank a write dbx5 dbx6 day0 dbx7 precharge bank b command spt03928 day1 day2 day3 wr ray t cay ray cas ras cke clk we cs t2 high ck3 t t0 t1 t4 t3 t5 t6 t15 t7 t8 t9 t10 t11 t12 t13 t14 burst length = 8, cas latency = 3 t19 t17 t16 t18 t21 t20 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 52 1998-10-01 20. full page read cycle 20.1. cas latency = 2 bs - page address back to zero from the highest order the burst counter wraps during this time interval. addr. dqm dq ap ~ ~ hi-z command command bank a read bank a activate bank b bank b command command ax activate activate ax +1 ax ~ ~ +2 ax rax rax cax ~ ~ ~ ~ rbx rbx ~ ~ ~ ~ ~ ~ ~ ~ spt03929 bursting beginning with the starting address. burst stop command the burst counter increments and continues terminate when the burst length is satisfied; full page burst operation does not bank b command ax read - 2ax 11 ax + bx bx +1 bx +2 + bx 3 + bx 4 cbx bank b command activate command bank b precharge bx 5 bx+ 6 + rby t rp rby cas ras cke clk cs we ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ high ck2 t t0 t1 t2 ~ ~ ~ ~ t3 t4 ~ ~ ~ ~ t5 t6 t15 t11 t7 t8 t10 t9 t13 t12 t14 burst length = full page, cas latency = 2 t16 t17 t18 t19 t20 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 53 1998-10-01 20.2. cas latency = 3 t14 bx full page burst operation does not terminate when the burst length is satisfied; bursting beginning with the starting address. the burst counter increments and continues bs command bank a ap dqm dq addr. command activate bank a hi-z read rax rax cax page address back to zero during this time interval. the burst counter wraps from the highest order activate activate bank b bank b command command ax ax 1 + 2 ax + ax ~ ~ ~ ~ - rbx rbx ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ax read bank b command ax 21 - ax 1 + bx bx 1 + cbx t3 clk cke cs ras we cas t0 high ck3 t t1 t2 ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ t4 t5 ~ ~~ ~ ~ ~ t7 t6 t8 ~ ~ t10 t9 t11 t13 t12 spt03930 bank b command activate bank b precharge command burst stop command + +2 bx bx 34 + 5 + bx rby t rrd rby t20 burst length = full page, cas latency = 3 t17 t15 t16 t18 t19 t21 t22
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 54 1998-10-01 21. full page write cycle 21.1. cas latency = 2 t14 dbx ~ ~ command activate command activate addr. ap dqm dq command bank a activate write command bank a hi-z rax rax dax dax 1 + cax page address back to zero the burst counter increments and continues bursting beginning with the starting address. during this time interval. cbx dbx write bank b terminate when the burst length is satisfied; command from the highest order the burst counter wraps bank b bank b 1 dax + dax 2 ~ ~ ~ ~ +3 dax- ~ ~ rbx rbx ~ ~~ ~ ~ ~ dax dax+1 full page burst operation does not data is ignored. dbx dbx +1 + dbx 2 4 3 + dbx+ dbx 5 + t3 clk cke cs cas ras bs we t0 high ck2 t t1 t2 ~ ~~ ~ ~~ ~ ~ ~~ ~ ~ ~~ ~ ~ ~ ~ ~ ~ t4 ~ ~ t5 ~ ~ t7 t6 t8 t10 t9 t11 t13 t12 spt03931 precharge command bank b burst stop command command bank b activate +6 rby rby t20 t17 t15 t16 t18 t19 t21 t22 burst length = full page, cas latency = 2
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 55 1998-10-01 21.2. cas latency = 3 ~ ~ terminate when the burst length is satisfied; command bursting beginning with the starting address. the burst counter increments and continues page address back to zero during this time interval. dq dqm addr. ap bank b bank b from the highest order the burst counter wraps command activate command activate write command bank a bank a command activate z hi dax dax+1 rax rax cax dax ~ ~ dax + dax 2 ~ ~ 3 + ~ ~ dax -1 dax 1 + ~ ~ rbx ~ ~ rbx ~ ~ spt03932 data is ignored. full page burst operation does not bank b write precharge bank b command burst stop command 4 dbx dbx 1 + dbx + 2 + dbx dbx 3+ cbx dbx+ 5 command bank b activate rby rby t8 bs we cas ras cs cke clk ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ t3 high t0 ck3 t t1 t2 ~ ~ ~ ~ ~ ~ t4 ~ ~ t5 t6 t7 t18 t13 t9 t10 t11 t12 t15 t14 t16 t17 t20 t19 t21 t22 burst length = full page, cas latency = 3
hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 56 1998-10-01 22. precharge termination of a burst 22.1. cas latency = 2 command activate bank a t14 bs write data is masked. of a write burst. precharge termination addr. dq dqm ap command bank a activate hi z bank a write command dax0 dax1 rax rax cax command bank a command precharge bank a dax3 dax2 activate ray rp t ray ay0 command bank a read bank a precharge command ay1 ay2 cay rp t t3 cs we cas ras cke clk t0 high ck2 t t1 t2 t4 t5 t7 t6 t8 t10 t9 t11 t13 t12 precharge termination of a read burst. spt03933 bank a command precharge command bank a read az0 az1 raz caz raz az2 rp t burst length = 8 or full page, cas latency = 2 t20 t17 t15 t16 t18 t19 t21 t22

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